IXTK82N25P IGBT IXYS IXTK82N25P IC 82N25P IC 82A 250V IGBT TO-3P 82A IGBT Switching Power N Channel Transistor IXTK82N25P IXYS MOSFET IGBT

High Power Handling: This 85A 250V Power Mosfet is designed to handle high-power applications, making it suitable for demanding electronics projects, such as power supplies, motor drives, and power amplifier circuits.

Features :-

• High Power Handling: This 85A 250V Power Mosfet is designed to handle high-power applications, making it suitable for demanding electronics projects, such as power supplies, motor drives, and power amplifier circuits.
• Long-Term Reliability: As a 100% new and original transistor, the IXTK82N25P ensures long-term reliability and durability, reducing the risk of premature failure and extending the lifespan of your electronics.
• Wide Operating Temperature Range: The standard operating temperature of this Mosfet allows for flexibility in various environmental conditions, making it suitable for use in a range of applications, including those in high-temperature settings.
• User-Friendly Design: The through-hole package type of this Mosfet makes it easy to integrate into your circuit, allowing for seamless installation and minimal technical expertise required.
• High-Quality Construction: Manufactured by the original brand, this Mosfet offers high-quality construction and performance, ensuring reliable operation and minimal signal loss in your electronics project.

Original IC IXYS CLA50E1200HB IGBT 1200V 50A IGBT High Efficiency CLA50E1200HB IC TO-247 SCR Triode Power Transistor CLA50E1200HB Thyristor 3 Pin Leads

Features:

• Thyristor for line frequency
• Planar passivated chip
• Long-term stability

Applications:

• Line rectifying 50/60 Hz
• Soft start AC motor control
• DC Motor control
• Power converter
• AC power control
• Lighting and temperature control
• Inverter
• Package : TO247

Data:

• VRSM/DSM : 1300V
• VRRM/DRM : 1200V
• I (tRMS) : 79A
• I (tAVm) : 50A
• T (vj) : 150 °C

Package Include:

• 1 x IXYS CLA50E1200HB IGBT

K50DDTP IGBT 50A 600V IGBT Power Transistor TO-247 3 Pin Leads Switching Power N Channel MOSFET 50DDTP Transistor K50DD IGBT

Features:

• Very low VCE(sat) 1.5V (typ.)
• Maximum Junction Temperature 175°C
• Short circuit withstand time 5uS
• Designed for :
• – Frequency Converters
• – Uninterrupted Power Supply
• TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
• – very tight parameter distribution
• – high ruggedness, temperature stable behavior
• – very high switching speed
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel Emitter Controlled HE diode
• Qualified according to JEDEC1
• for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models

Package Include:

• 1 x K50DDTP IGBT 50A 600V IGBT Transistor

NCE80TD60BT Transistor NCE80TD60 Transistor IC 80TD60 IGBT 80A 600V IGBT Transistor TO-247 3 Pin Leads Switching Power N-Channel Transistor NCE80TD60 MOSFET

Features:

• Very low VCE(sat) 1.5V (typ.)
• Maximum Junction Temperature 175°C
• Short circuit withstand time 5uS
• Frequency Converters
• Uninterrupted Power Supply
• TRENCHSTOP™ and Field stop technology for 600V applications offers :
• very tight parameter distribution
• high ruggedness, temperature stable behavior
• very high switching speed
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel Emitter Controlled HE diode
• Qualified according to JEDEC1
• for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models

Specifications :

• NCE80TD60BT TO-247
• NCE80TD60 TO247
• 80A/600V
• IGBT transistor
• New Original

Package Include:

• 1 x NCE80TD60 Transistor IC

FGHL50T65SQD 50T65SQD 50T65 IGBT 50A 650V IGBT Transistor TO-247 Switching Power N-Channel Transistor MOSFET

Features:

• Very low VCE(sat) 1.5V (typ.)
• Maximum Junction Temperature 175°C
• Short circuit withstand time 5uS
• Designed for :
• – Frequency Converters
• – Uninterrupted Power Supply
• TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
• – very tight parameter distribution
• – high ruggedness, temperature stable behavior
• – very high switching speed
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel Emitter Controlled HE diode
• Qualified according to JEDEC1
• for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models

Package Include:

• 1 x FGHL50T65SQD 50T65SQD 50T65 IGBT 50A 650V IGBT Transistor TO-247 Switching Power N-Channel Transistor MOSFET

BT40T60 40T60 4060 TO-3P 40T60 TO3P 40A 600V IGBT Transistor Power MOSFET 3 Pin Igbt Transistor

Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

Features:

• Manufacturer: Fairchild Semiconductor
• Product Category: IGBT Transistors
• RoHS: RoHS Compliant Details
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current at 25 C: 120 A
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Packaging: Tube
• Brand: Fairchild Semiconductor
• Minimum Operating Temperature: – 55 C
• Factory Pack Quantity: 450
• Unit Weight: 0.225789 oz
• Model: 40T60

Package Include:

• 1 x BT40T60 40T60 4060 TO-3P 40T60 TO3P 40A 600V IGBT Transistor Power MOSFET 3 Pin Igbt Transistor