Description: IRG4BC40KD TO-220, 600V-20A IGBT
Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Lead-Free
Lower switching losses allow more cost-effective operation than power MOSFETs to 150 kHz (“hard switched” mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz)
VCES = 100°C ICM ILM VGE EARV 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, or M3 screw.
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 V VGE = 250µA Emitter-to-Collector Breakdown Voltage 18 V VGE = 1.0A V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.44 V/°C VGE = 20A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage = 40A See = 150°C VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, 250µA V GE(th)/TJ Temperature Coeff. of Threshold Voltage 13 mV/°C VCE = VGE, = 250µA gfe Forward Trans conductance 28 S VCE =20A 250 VGE = 0V, VCE = 600V ICES Zero Gate Voltage Collector Current µA 2.0 VGE = 0V, VCE 25°C 2500 VGE = 0V, VCE = 150°C IGES Gate-to-Emitter Leakage Current ±100 nA VGE = ±20V V(BR)CES V(BR)ECS
Qg Qge Qgc t d(on) tr td(off) tf Eon Eoff E ts td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate – Emitter Charge (turn-on) Gate – Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 18 nC VCC = 400V See Fig.8 54 VGE = 20A, VCC 480V 110 VGE = 10 Energy losses include “tail” mJ See Fig. = 20A, VCC 480V ns VGE = 10 Energy losses include “tail” mJ See Fig. 14 nH Measured 5mm from package VGE 0V pF VCC = 30V See Fig. = 1.0MHz
Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
Duty cycle: = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 28W
1 x IRG4BC40KD TO-220, 600V-20A IGBT