Description: IRG4PC50FD 600V 70A IGBT
IRG4PC50FD IRG4PC50KD IRG4PC50WD G4PC50FD IGBT TO-247 600V 70A 200W IGBT Transistor N-Channel MOSFET
Specification:
- Product Category: IGBT Transistors
- Configuration: Single
- Collector- Emitter Voltage VCEO Max: 600 V
- Collector-Emitter Saturation Voltage: 1.6 V
- Maximum Gate Emitter Voltage: +/- 20 V
- Continuous Collector Current at 25 C: 70 A
- Pd – Power Dissipation: 200 W
- Mounting Style: Through Hole
- Package / Case: TO-247-3
- Minimum Operating Temperature: – 55 C
Package Include:
- 1 x IRG4PC50FD IRG4PC50KD IRG4PC50WD G4PC50FD IGBT TO-247 600V 70A IGBT Transistor N-Channel MOSFET
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