Description: MJ802 NPN Power Transistor
The MJ802 is a silicon Epitaxial-Base power transistor mounted in a Jedec TO-3 metal case. It is intended for general-purpose power amplifiers and switching applications.
Features:
- Type –Â NPN
- Collector-Emitter Voltage:Â 90Â V
- Collector-Base Voltage:Â 100Â V
- Emitter-Base Voltage:Â 4Â V
- Collector Current:Â 30Â A
- Collector Dissipation –Â 200Â W
- DC Current Gain (hfe) – 25 to 100
- Transition Frequency –Â 2Â MHz
- Operating and Storage Junction Temperature Range -65 to +200 °C
- Package –Â TO-3
- Maximum Collector-Base Voltage |Vcb|: 100 V
- Maximum Collector Current |Ic max|: 30 A
- Max. Operating Junction Temperature (Tj): 200 °C
- Transition Frequency (ft): 2 MHz
- Forward Current Transfer Ratio (hFE), MIN: 25
- High DC Current Gain- : hFE=Â 25-100@IC= 7.5A
- Excellent Safe Operating Area
MJ802 Equivalent/Alternate:
- MJ802G, MJ8100, MJ8100R, MJ8101, MJ8500, MJ8501, MJ8502, MJ8503,MJ8504, MJ8505, MJ4502
Application:
- General Purpose Power Amplifier
- Switching Applications
Package Include:
- 1 x MJ802 NPN Power Transistor
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