IKW40N120T2 IKW40T120 K40T120 IGBT 40A 1200V IGBT Transistor TO-247 Electric Welding Machine Inverter IGBT Welder Inverter Insulated Gate Bipolar Transistor

IKW40N120T2 IKW40T120 K40T120 IGBT 40A 1200V IGBT Transistor TO-247 Electric Welding Machine Inverter IGBT Welder Inverter Insulated Gate Bipolar Transistor

The 1200V, 40A, hard-switching TRENCHSTOP IGBT3 co-packed with free-wheeling diode in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Features:

• Best in class TO247
• Short circuit withstand time – 10s
• Designed for :
• Frequency Converters
• Uninterrupted Power Supply
• Trench Stop and Field stop technology for 1200 V applications offers :
• very tight parameter distribution
• high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel Emitter Controlled HE diode
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models.
• Lowest VCEsat drop for lower conduction losses
• Low switching losses
• Easy parallel switching capability due to positive temperature coefficient in VCEsat
• Very soft, fast recovery anti-parallel Emitter Controlled HE diode
• High ruggedness, temperature stable behavior
• Low EMI emissions
• Low gate charge
• Very tight parameter distribution

Specifications:

• Product Category: IGBT Transistors
  
• Technology: Si
  
• Package / Case: TO-247-3
  
• Mounting Style: Through Hole
  
• Configuration: Single
  
• Collector- Emitter Voltage VCEO Max: 1200 V
  
• Collector-Emitter Saturation Voltage: 1.7 V
  
• Maximum Gate Emitter Voltage: 20 V
  
• Continuous Collector Current at 25 C: 75 A
  
• Pd – Power Dissipation: 270 W
  
• Minimum Operating Temperature: – 40 C
  
• Maximum Operating Temperature: + 150 C
  
• Height: 20.95 mm
  
• Length: 15.9 mm
  
• Width: 5.3 mm
  
• Gate-Emitter Leakage Current: 600 nA
  
• Product Type: IGBT Transistors
  
• Factory Pack Quantity: 240
  
• Subcategory: IGBTs
  

Applications

• 1. Highest efficiency – low conduction and switching losses
• 2. Comprehensive portfolio in 600 V and 1200 V for flexibility of design
• 3. High device reliability

Package Include:

• 1 x K40T120 IGBT N-Channel 1200V 40A