MCR100 Thyristor MCR100-6 400V 0.8A MCR100 Transistor Thyristor 3 Pin Leads TO-92 Package MCR100-6 SCR Thyristor

The MCR100-6 SCR, Thyristor 400V .8A PNP device is designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

The MCR100-6 is 0.8A, 400V, Sensitive Gate Sillicon Controlled Rectifier.

A Silicon Controlled Rectifier (SCR) is a type of semiconductor device that is widely used as a switch or rectifier in power control and voltage regulation circuits. It is a three-layer, four-terminal device that can control the flow of current in either direction and provide full-wave rectification in power conversion applications.

The SCR can be triggered or turned on by a small trigger current or voltage applied to its gate terminal, and it remains in the conducting state as long as the anode-to-cathode voltage is positive and the gate trigger current is maintained. The SCR can be turned off by reducing the anode-to-cathode voltage to zero or by removing the gate trigger current.

Features:

• 1. Sensitive Gate Allows Triggering by Microcontrollers and Other logic Circuits
• 2. Blocking Voltage to 400 Volts
• 3. On-State Current Rating of 0.8 Amperes RMS at 80°C
• 4. High Surge Current Capability – 10 Amperes
• 5. Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design
• 6. Immunity to dV/dt – 20 V/us Minimum at Tj=110°C
• 7. Glass-Passivated Surface for Reliability and Uniformity
• 8. Pb-Free Package

Specifications:-

• 1. Peak Repetitive Off–State Voltage : Vdrm, Vrrm = 400 V
• 2. On-State RMS Current (Tc = 80°C) 180° Conduction Angles : IT(RMS) : 0.8 A
• 3. Peak Non-Repetitive Surge Current : Itsm = 10 A
• 4. Forward Peak Gate Power (Ta = 25°C) : Pgm = 0.1 W
• 5. Operating Junction Temperature: Tj = -40 to + 110°C
• 6. Storage Temperature Range : Tstg = -40 to + 110°C
• 7. Case : Molded plastic

Package Include:

• 1 x MCR100 Thyristor