Description: IRGIB10B60KD IGBT 600V 16A 44W
IRGIB10B60KD IRGIB10B60 10B60 IGBT 600V 16A 44W TO-220 IGBT Transistor MOSFET
Specification:
IGBT Type | NPT | |
---|---|---|
Voltage – Collector Emitter Breakdown (Max) | 600V | |
Current – Collector (Ic) (Max) | 16A | |
Current – Collector Pulsed (Icm) | 32A | |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 10A | |
Power – Max | 44W | |
Switching Energy | 156µJ (on), 165µJ (off) | |
Input Type | Standard | |
Gate Charge | 41nC | |
Td (on/off) @ 25°C | 25ns/180ns | |
Test Condition | 400V, 10A, 50 Ohm, 15V | |
Reverse Recovery Time (trr) | 79ns | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Package / Case | TO-220FP |
Benefits
- 1. Benchmark Efficiency for Motor Control.
- 2. Rugged Transient Performance.
- 3. Low EMI.
- 4. Excellent Current Sharing in Parallel Operation.
Features
- 1. Low VCE (on) Non Punch Through IGBT Technology.
- 2. Low Diode VF.
- 3. 10μs Short Circuit Capability.
- 4. Square RBSOA.
- 5. Ultrasoft Diode Reverse Recovery Characteristics.
- 6. Positive VCE (on) Temperature Coefficient.
- 7. Lead-Free
Package Include:
- 1 x IRGIB10B60KD IGBT 600V 16A 44W
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