Description: 40N60NPFD FGH40N60 40N60A4D 40N60 4060 IGBT 40A 600V
FGH40N60 40N60NPFD 40N60A4D 40N60 IGBT 40A 600V TO-247 IGBT Transistor SMPS Switching Power Supply Transistor MOSFET High Speed
Specifications:
- Collector-emitter voltage: 600V
- Gate-emitter voltage: ±20V
- Gate-emitter threshold voltage: 4V to 6.5V
- Collector-emitter saturation voltage: 1.8V to 2.7V
- Collector current (continuous)
- @25℃: 80A
- @10025℃: 40A
- Collector current (pulsed): 120A
- Diode forward voltage: 1.9V to 2.6V
- Rise time: 80ns
- Fall time: 105ns
- Turn-on delay time: 18ns
- Turn-off delay time: 110ns
- Diode reverse recovery time: 32ns
- Diode reverse recovery charge: 74nC
- Gate-emitter charge: nC
- Gate-collector charge: 52nC
- Maximum power dissipation: 290W
- Operating temperature: -55℃ to +175℃
Features
- 1. International standard packages
- 2. Guaranteed Short Circuit SOA capability
- 3 Low VCE(sat) – for low on-state conduction losses
- 4. High current handling capability
- 5. MOS Gate turn-on – drive simplicity
- 6. Fast Fall Time for switching speeds up to 20 kHz
Applications
- 1. AC motor speed control
- 2. Uninterruptible power supplies (UPS)
- 3. Welding
Advantages
- 1. Easy to mount with 1 screw (TO-247) (isolated mounting screw hole)
- 2. High power density
Package Include:
- 1 x 40N60NPFD FGH40N60 40N60A4D 40N60 4060 IGBT 40A 600V Mosfet
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