Description: FGHL50T65SQD 50T65SQD 50T65 IGBT 50A 650V IGBT
FGHL50T65SQD 50T65SQD 50T65 IGBT 50A 650V IGBT Transistor TO-247 Switching Power N-Channel Transistor MOSFET
Features:
- Very low VCE(sat) 1.5V (typ.)
- Maximum Junction Temperature 175°C
- Short circuit withstand time 5uS
- Designed for :
- – Frequency Converters
- – Uninterrupted Power Supply
- TRENCHSTOPâ„¢ and Fieldstop technology for 600V applications offers :
- – very tight parameter distribution
- – high ruggedness, temperature stable behavior
- – very high switching speed
- Positive temperature coefficient in VCE(sat)
- Low EMI
- Low Gate Charge
- Very soft, fast recovery anti-parallel Emitter Controlled HE diode
- Qualified according to JEDEC1
- for target applications
- Pb-free lead plating; RoHS compliant
- Complete product spectrum and PSpice Models
Package Include:
- 1 x FGHL50T65SQD 50T65SQD 50T65 IGBT 50A 650V IGBT Transistor TO-247 Switching Power N-Channel Transistor MOSFET
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