IRFP054NPBF IRFP054N IRFP054 IRFP 054 Power MOSFET 55V 72A 130W N-Channel TO-247 HEXFET Power Transistor MOSFET 3 Pin IC MOS Field Effect IC Electronic Components

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

• Type: n-channel
• Drain-to-Source Breakdown Voltage: 55 V
• Gate-to-Source Voltage, max: ±20 V
• Drain-Source On-State Resistance, max: 12 mΩ
• Continuous Drain Current: 72 A
• Total Gate Charge: 86.7 nC
• Power Dissipation: 130 W
• Package: TO-247AC

Features:

• Advanced Process Technology
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching l Fully Avalanche Rated

Package Include:

• 1 x IRFP054N HEXFET® Power MOSFET