24C02P 24C02 Serial CMOS EEPROM 2K Bit 256×8 Serial CMOS EEPROM Memory IC DIP-8 Package I2C Bus IC

Name: 24C02P 24C02 Serial CMOS EEPROM 2K Bit 256x8 Serial CMOS EEPROM Memory IC DIP-8 Package I2C Bus IC
Brand: EEPROM IC
SKU: u7107
Price: 15.00 BDT
Availability: InStock

৳ 15.00

Add to Wishlist

SKU: u7107 Categories: EEPROM IC, Microcontroller, ICs & Base Tags: 24C02, CMOS, EEPROM, Serial

Description
Reviews (0)

Description: 24C02 Serial CMOS EEPROM

24C02P 24C02 Serial CMOS EEPROM 2K Bit 256×8 Serial CMOS EEPROM Memory IC DIP-8 Package I2C Bus IC

The 24C02 are 2K bit electrically erasable programmable memories (EEPROM), organized as 256 x 8 bits. The memories operate with a power supply value as low as 1.8V for the 24C02R only. Both Plastic Dual-in-Line and Plastic Small Outline packages are available. The memories are compatible with the I2C standard, two wire serial interface which uses a bi-directional data bus and serial clock.

The memories carry a built-in 4 bit, unique device identification code (1010) corresponding to the I2C bus definition. This is used together with 3 chip enable inputs(E2, E1, E0) so that up to 8 x 2K devices may be attached to the I2C bus and selected individually. The memories behave as a slave device in the I2C protocol with all memory operations synchronized by the serial clock. Read and write operations are initiated by a START condition generated by the bus master. The START condition is followed by a stream of 7 bits (identification code 1010), plus one read/write bit and terminated by an acknowledge bit.

Features:-

• Single-Supply with Operation from 4.5V to 5.5V
• Low-Power CMOS Technology:
– Read current 1 mA, max.
– Standby current 5 μA, max.
• 2-Wire Serial Interface, I2C™ Compatible
• Cascadable up to Eight Devices
• Schmitt Trigger Inputs for Noise Suppression
• Output Slope Control to Eliminate Ground Bounce
• 100 kHz and 400 kHz Clock Compatibility
• Fast Page or Byte Write Time 1 ms, typical
• Self-Timed Erase/Write Cycle
• 16-Byte Page Write Buffer
• Hardware Write-Protect for Upper Half of the Array (80h-FFh)
• ESD Protection >4,000V
• More than 1 Million Erase/Write Cycles
• Data Retention >200 Years
• Factory Programming Available
• Packages Include 8-lead PDIP, SOIC, TSSOP, DFN, TDFN and MSOP
• Pb-Free and RoHS Compliant
• Temperature ranges

Specification:-

Parameter	Specification
VCC	7.0V
All inputs and outputs w.r.t. VSS	-0.6V to VCC +1.0V
Storage temperature	-65°C to +150°C
Ambient temperature with power applied	40°C to +125°C
ESD protection on all pins	≥ 4 kV