Description: 2SK3537 11.5A High Speed Mosfet
2SK3537 2SK-3537 K3537 3537 MOSFET 8.5A TO-220 Field Effect Transistor Silicon N-Channel Power MOSFET Transistor
2SK3537-01MR High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof. Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt Ta=25°C Tc=25°C Tch Tstg Ratings to +150 Unit mJ kV/µs W °C
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS ID=11.5A VDS=25V VDS -di/dt=100A/µs Tch=25°C Test Conditions channel to case channel to ambient
Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge
Applications:
- Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
- Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a).
Package Include:
- 1 x 2SK3537 11.5A High Speed Mosfet
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