| Channel Type | N | |
| Maximum Continuous Drain Current | 82 A | |
| Maximum Drain Source Voltage | 80 V | |
| Maximum Drain Source Resistance | 13 mΩ | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Channel Mode | Enhancement | |
| Category | Power MOSFET | |
| Maximum Power Dissipation | 230 W | |
| Typical Input Capacitance @ Vds | 3820 pF@ 25 V | |
| Typical Turn-Off Delay Time | 49 ns | |
| Typical Gate Charge @ Vgs | 160 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 8.77mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.54mm | |
| Dimensions | 10.54 x 4.69 x 8.77mm | |
| Transistor Material | Si | |
| Width | 4.69mm | |
| Series | HEXFET | |
| Typical Turn-On Delay Time | 13 ns |
Package Include:
1 x IRF2807PBF N-Channel MOSFET 82A 80V
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