IHW25N120R3 H25R1203 IGBT 1200V 25A IGBT Power Transistor TO-247 3 Pin Leads Power MOSFET For Induction Cooker

Description: IHW25N120R3 H25R 1203 IGBT 1200V 25A IGBT Power Transistor

IHW25N120R3 H25R1203 IGBT 1200V 25A IGBT Power Transistor TO-247 3 Pin Leads Power MOSFET For Induction Cooker

Specifications/Feature

• Powerful monolithic body diode with low forward voltage designed for soft commutation only
• very tight parameter distribution
• high ruggedness, temperature stable behavior
• low VCE sat
• easy parallel switching capability due to positive temperature coefficient in VCEsat
• Low EMI
• Qualified according to JEDEC for target applications
• Pb-free lead plating; ROHS complaint
• Collector-emitter voltage VCE: 1200 V
• DC collector current, limited by IC: 40A at 25°C and 25A at 100°C
• Gate-emitter voltage / Transient Gate-emitter voltage, ) VGE :±20 to ±25volt
• VCE sat :1.48V at 25°C

Applications:

• Inductive cooking
• Inverterized microwave ovens
• Resonant converters
• Softs witching applications
• Electronics Projects

Package Include:

• 1 x  H25R1203 IHW25N120R3 H25R 1203 IGBT 1200V 25A IGBT Power Transistor MOSFET Feld Effect Tube Power Induction Cooker