60N60FD1 FGH60N60 60N60FDI 60N60 IGBT 600V 60A TO-247 IGBT Switching Power N-Channel Transistor MOSFET Field Effect Transistor

Description: 60N60FD1 IGBT 600V 60A

60N60FD1 FGH60N60 60N60FDI 60N60 IGBT 600V 60A TO-247 IGBT Switching Power N-Channel Transistor MOSFET Field Effect Transistor

Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

Features:

• Manufacturer: Fairchild Semiconductor
• Product Category: IGBT Transistors
• RoHS: RoHS Compliant Details
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current at 25 C: 120 A
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Packaging: Tube
• Brand: Fairchild Semiconductor
• Minimum Operating Temperature: – 55 C
• Factory Pack Quantity: 450
• Unit Weight: 0.225789 oz

Package Include:

• 1 x 60N60FD1 FGH60N60 60N60FDI 60N60 IGBT 600V 60A TO-247 IGBT Switching Power N-Channel Transistor MOSFET Field Effect Transistor