2SK2996 2SK-2996 K2996 2996 MOSFET 600V 10A TO-220 Field Effect Transistor Silicon N-Channel Power MOSFET Transistor

Description: 2SK2996 600V 10A N-Channel Mosfet

2SK2996 2SK-2996 K2996 2996 MOSFET 600V 10A TO-220 Field Effect Transistor Silicon N-Channel Power MOSFET Transistor

Features:

• Manufacturer: Toshiba
• Technology: Si
• Mounting Style: Through Hole
•  Package / Case: TO-220-3
• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Vds – Drain-Source Breakdown Voltage: 600 V
• Id – Continuous Drain Current: 10 A
• Rds On – Drain-Source Resistance: 1 Ohms
• Vgs – Gate-Source Voltage: 30 V
• Minimum Operating Temperature: – 55 C
• Maximum Operating Temperature: + 150 C
• Packaging: Reel
• Channel Mode: Enhancement
• Brand: Toshiba

Package Include:

• 1 x 2SK2996 600V 10A N-Channel Mosfet