SGH80N60UFD G80N60UFD G80N60 80N60 IGBT 80A 600V IGBT Transistor TO-3P Field Effect Triode Power IGBT Transistor MOSFET For Inverter Welding Machine

Description: G80N60 80A 600 IN TO-3P Ultra-Fast IGBT

Features:

• Product Category: MOSFET
• Technology: Si
• Mounting Style: Through Hole
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds – Drain-Source Breakdown Voltage: 600 V
• Id – Continuous Drain Current: 80 A
• Rds On – Drain-Source Resistance: 32 mOhms
• Vgs – Gate-Source Voltage: – 30 V, + 30 V
• Vgs th – Gate-Source Threshold Voltage: 2 V
• Qg – Gate Charge: 400 nC
• Minimum Operating Temperature: – 55 C
• Maximum Operating Temperature: + 150 C
• Pd – Power Dissipation: 520 W
• Channel Mode: Enhancement
• Configuration: Single
• Series: EF
• Transistor Type: 1 N-Channel

Package Include:

• 1 x SGH80N60UFD G80N60UFD G80N60 80N60 IGBT 80A 600V IGBT Transistor TO-3P Field Effect Triode Power IGBT Transistor MOSFET For Inverter Welding Machine