IRFP264NPBF IRFP264N IRFP264 IRFP 264 Power MOSFET 250V 38A 280W N-Channel TO-247 HEXFET Power Transistor MOSFET 3 Pin IC MOS Field Effect IC Electronic Components

Description: IRFP264 Power MOSFET

IRFP264NPBF IRFP264N IRFP264 IRFP 264 Power MOSFET 250V 38A 280W N-Channel TO-247 HEXFET Power Transistor MOSFET 3 Pin IC MOS Field Effect IC Electronic Components

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

Features:

• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 280 W
• Maximum Drain-Source Voltage |Vds|: 250 V
• Maximum Gate-Source Voltage |Vgs|: 10 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
• Maximum Drain Current |Id|: 38 A
• Maximum Junction Temperature (Tj): 150 °C
• Total Gate Charge (Qg): 210 nC
• Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm
• Package: TO-247

Features:

• • Dynamic dV/dt Rating
• • Repetitive Avalanche Rated
• • Isolated Central Mounting Hole
• • Fast Switching
• • Ease of Paralleling
• • Simple Drive Requirements
• • Lead (Pb)-free Available

Package Include:

• 1 x IRFP264 Power MOSFET