MJ11033 MJ-11033 11033 PNP Transistor 120V 50A 300W Power Darlington Transistor TO-3 PNP Complementary Silicon Transistor Switching Regulators Transistors

Description: MJ11033 PNP Power Darlington Transistor

MJ11033 MJ-11033 11033 PNP Transistor 120V 50A 300W Power Darlington Transistor TO-3 PNP Complementary Silicon Transistor Switching Regulators Transistors

MJ11033 (PNP) High-Current Complementary Silicon Power Transistors is used for 50 Ampere as output devices in complementary general purpose amplifier

Features:

• Type – PNP
• Collector-Emitter Voltage: -120 V
• Collector-Base Voltage: -120 V
• Emitter-Base Voltage: -5 V
• Collector Current: -50 A
• Collector Dissipation – 300 W
• DC Current Gain (h_fe) – 1000 to 18000
• Operating and Storage Junction Temperature Range -65 to +200 °C
• Package – TO-3
• High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc
  • hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with Built–In Base–Emitter Shunt Resistor
• Junction Temperature to +200
  C
• Type Designator: MJ11033
• Material of Transistor: Si
• Polarity: PNP

Main Features:

• High DC current gain of 1000 hFE minimum when the collector is operated at 25 amp DC
• DC current gain capacity may be reduced to 400 hFE, if the collector current rises to 50 amp DC
• The transistor is able to handle up to 100 amp if the current is in the pulsed manner
• Internal protection diode are provided to the transistors for protection against inductive transients.
• The monolithic design of the BJTs also include internal base/emitter shunt resistor to limit maximum base current.
• The 50 amp transistors are rated to handle junction temperatures as high 200 degrees Celsius
• Total power dissipation or power handling capacity without heatsink is 300 watts

MJ11033 Equivalent/Alternate:

• MJ10000, MJ10001, MJ10002, MJ10003, MJ10004, MJ11032

Application:

• General Purpose Amplifier
• Darlington

Package Include:

• 1 x MJ11033 PNP Power Darlington Transistor