Description: STP65NF06 P65NF06 MOSFET 65N06 Power MOSFET
A CLASS STP65NF06 P65NF06 MOSFET 65N06 Power MOSFET 60A 60V 110W N-Channel TO-220 3 Pin Leads 65NF06 MOSFET Transistor Power MOS Field Effect Transistor
Parameters
- Drain-source voltage (VGS = 0)
- Gate-source voltage Drain current (continuous) = 25 ° C
- Drain current (continuous) = 100C
- Drain current (pulse) Total dissipation = 25C ​​
- Derating Factor Value up to Maximum 175.
- junction operating temperature Unit W /CV / ns mJ C
- Peak recovery diode slope Energy temperature avalanche single pulse Storage
- Pulse width is limited by the safe operating area.
- ISD 60Amper di/dt 300A/µs,
- VDD VBR DSS,
- Tj TJMAX 3.
- Start = 25C, = 30Amper,
- VDD = 40Volt
Package Include:
- 1 x STP65NF06 60V 60A N-Chanel Mosfet
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