IRFP4668NPBF IRFP4668N IRFP4668 IRFP 4668 Power MOSFET 200V 130A 520W N-Channel TO-247 HEXFET Power Transistor MOSFET 3 Pin IC MOS Field Effect IC Electronic Components

Specifications:

• Type Designator: IRFP4668
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 520 W
• Maximum Drain-Source Voltage |Vds|: 200 V
• Maximum Gate-Source Voltage |Vgs|: 30 V
• Maximum Drain Current |Id|: 130 A
• Total Gate Charge (Qg): 161 nC
• Maximum Drain-Source On-State Resistance (Rds): 0.0097 Ohm
• Package: TO247AC

• Battery Operated Drive
• Consumer Full-Bridge
• Full-Bridge
• Push-Pull

Package Include:

• 1 x IRFP4668 200V Single N-Channel HEXFET