Description: 2SK3549-01 High Voltage Power Mosfet
2SK3549 2SK-3549 K3549 3549 MOSFET 900V 10A 270W TO-220 Field Effect Transistor Silicon N-Channel Power MOSFET Transistor
Category | : | Power MOSFET |
Channel Mode | : | Enhancement |
Channel Type | : | N |
Configuration | : | Single |
Dimensions | : | 15.5 x 5 x 21.5 mm |
Forward Diode Voltage | : | 1.5 V |
Forward Transconductance | : | 12 S |
Height | : | 21.5 mm |
Length | : | 15.5 mm |
Maximum Continuous Drain Current | : | ±10 A |
Maximum Drain Source Resistance | : | 1.4 Ω |
Maximum Drain Source Voltage | : | 900 V |
Maximum Gate Source Voltage | : | ±30 V |
Maximum Operating Temperature | : | +150 °C |
Maximum Power Dissipation | : | 270 W |
Minimum Operating Temperature | : | -55 °C |
Mounting Type | : | Through Hole |
Number of Elements per Chip | : | 1 |
Operating Temperature Range | : | -55 to +150 °C |
Package Type | : | TO-247 |
Pin Count | : | 3 |
Typical Gate Charge @ Vgs | : | 34.5 nC @ 10 V |
Typical Input Capacitance @ Vds | : | 1250 pF @ 25 V |
Typical Turn On Delay Time | : | 26 ns |
Typical TurnOff Delay Time | : | 60 ns |
Width | : | 5 mm |
Package Include:
1 x 2SK3549-01 High Voltage Power Mosfet
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