Description: FQP50N06 N-Channel 60V 50A Enhancement Mode Power Field Effect Transistor TO-220Â
FQP50N06 MOSFET KIA50N06 50N06 MOSFET N-Channel 60V 50A Power Field Effect Transistor TO-220 Package 3 Pin Leads Power Amplifier
This FQP50N06 power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 310000 mW. In order to ensure parts aren’t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with stripfet iii technology.
Specifications:
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EU RoHS – Compliant
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Product Category – Power Transistor
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Configuration – Single
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Technology – StripFET III
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Channel Mode – Enhancement
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Channel Type – N
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Number of Elements per Chip – 1
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Maximum Drain Source Voltage (V) – 75
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Maximum Gate Source Voltage (V) – ±20
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Maximum Continuous Drain Current (A) – 120
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Maximum Drain Source Resistance (mOhm) – 7.5@10V
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Typical Gate Charge @ Vgs (nC) – 160@10V
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Typical Gate Charge @ 10V (nC) – 160
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Typical Input Capacitance @ Vds (pF) – 5000@25V
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Maximum Power Dissipation (mW) – 310000
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Minimum Operating Temperature (°C) – -55
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Maximum Operating Temperature (°C) – 175
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Packaging – Tube
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Typical Turn-On Delay Time (ns) – 30
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Typical Turn-Off Delay Time (ns) – 130
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Typical Fall Time (ns) – 90
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Typical Rise Time (ns) – 140
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Mounting – Through Hole
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Package Height (mm) – 9.15(Max)
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Package Length (mm) – 10.4(Max)
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Package Width (mm) — 4.6(Max)
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PCB changed — 3
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Tab — Tab
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Standard Package Name — TO-220
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Supplier Package — TO-220
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Pin Count — 3
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Lead Shape — Through Hole
Package Include:
- 1 x FQP50N06 KIA50N06 50N06 5006 N-Channel 60V 50A Enhancement Mode Power Field Effect Transistor TO-220 Package General Purpose Power Amplifier
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