Description: IRF3205 MOSFET IC High Quality IRF 3205 55V 110A 200W TO-220 N Channel Power MOSFET 3 Pin Transistor IC
A CLASS 3205 IRF3205PBF IRF3205 IRF 55V 110A 200W TO-220 N-Channel Power MOSFET 3 Pin IC Power Transistor Field Effect MOSFET 3 Pin Leads
Improve switching performance and enhance the avalanche energy with of CS 3205 transistors. These transistors can be used in various power switching applications and feature higher efficiency.
The IRF3205 is N-Channel MOSFET that can switch high currents upto 110A & 55V. It is mostly used for dynamic dv/dt rating and consumer full bridge projects. The specialty of the IRF3205 that it has very low on resistance of only 8.0 mΩ make it suitable for switching circuits like DC-DC converter, motor speed control & Inverters etc. It is also one of the easily available & cheap MOSFET with a low on resistance. In this article, I am going to cover each and everything related to this MOS FIT transistor, its main features, pinout, working, and applications.
Specifications:
- Transistor Polarity: N
- Maximum Drain Source Voltage: 55 V
- Maximum Continuous Drain Current: 110 A
- Maximum Gate Source Voltage: ±20V
- Power Dissipation: 200 W
- Maximum Forward Voltage: 55VDC
- Output Power: 200W
- Peak Non-Repetitive Surge Current: 390A
- Maximum Reverse Current: 25uA
- Channel Mode: N-Channel Enhancement
- Peak Reverse Recovery Time : 101ns
- Repetitive Peak Reverse Voltage: 55VDC
- Configuration: Single
- Maximum Drain Source Resistance: 0.008 Ohms@10V
- Category Power: MOSFET
- Maximum Forward Current: 110A
- Typical Fall Time: 65ns
- Typical Gate Charge: @ Vgs 146nC @10V
- Typical Input Capacitance: @ Vds 3247pF@25V
- Typical Rise Time: 101ns
- Typical Turn-Off Delay Time: 50ns
- Typical Turn-On Delay Time: 14ns
- Minimum Operating Temperature: -55°C
- Maximum Operating Temperature:175°C
- Mounting Through: Hole
- Pins: 3
- Family: IRF3205
- Width: 4.69mm
- Height: 8.77mm
- Product Length: 10.54mm
- Product Type: MOSFET
Features:
- Available in To-220 package
- Advanced Process Technology
- Low On-Resistance of 8.0 mΩ
- Minimum Gate threshold voltage 2V
- Rise time is 101ns
- This Transistor is commonly used with Power Switching circuits
- Continuous Drain Current (ID) is 110A when VGS is 10V
- N-Channel Power MOSFET
- Drain to Source Breakdown Voltage: 55V
- Gate-Source Voltage is (VGS) is ±20V
- 175 °C Operating Temperature
Structure of IRF3205 MOSFET
The source and drain of transistor are made up of n-type material while component body and the substrate is made up of p-type material. Silicon dioxide on the substrate layer gives this device a metal oxide semiconductor construction. MOSFET3205 is unipolar conduction is carried out by the movement of electrons. Gate is separated from the body of device by using Insulating layer. It is N-channel that is way it is controlled by gate terminal by providing positive voltages
IRF3205 Replacement and Equivalent transistors:
You can replace IRF3205 with IRF1405, IRF1405Z, IRF1407, IRF1607, IRF2805, IRF2907Z, IRF3205Z, IRF3305, IRF3808,IRFB3207Z, IRFB3207ZG, IRFB3256, IRFB3306, IRFB3306G, IRFB3307, IRFB3307Z, IRFB4110, IRFB4110G, IRFB4310, IRFB4310G, IRFB4310Z, IRFB4310ZGIRFB3006, IRFB3006G, IRFB3077, IRFB3077G, IRFB3206, IRFB3206G, IRFB3207.
Applications of IRF3205 MOSFET Transistor
- Speed control
- Choppers
- Boost converters
- Fast Switching Applications
- Solar inverters
- Industrial & Commercial applications
- Full-Bridge
- Push-Pull
Package Include:
- 1 x IRF3205 MOSFET IC High Quality Class IRF 3205 55V 110A TO-220 N Channel Power MOSFET 3 Pin Transistor IC
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