Features:
- Type – NPN
- Collector-Emitter Voltage: 120 V
- Collector-Base Voltage: 120 V
- Emitter-Base Voltage: 5 V
- Collector Current: 50 A
- Collector Dissipation – 300 W
- DC Current Gain (hfe) – 1000 to 18000
- Operating and Storage Junction Temperature Range -65 to +200 °C
- Package – TO-3
- Curves to 100 A (Pulsed)
- Diode Protection to Rated IC
- Monolithic Construction with Built–In Base–Emitter Shunt Resistor
- Junction Temperature to +200C
- Type Designator: MJ11032
- Material of Transistor: Si
- Polarity: NPN
Main Features
- High DC current gain of 1000 hFE minimum when the collector is operated at 25 amp DC
- DC current gain capacity may be reduced to 400 hFE, if the collector current rises to 50 amp DC
- The transistor is able to handle up to 100 amp if the current is in the pulsed manner
- Internal protection diode are provided to the transistors for protection against inductive transients.
- The monolithic design of the BJTs also include internal base/emitter shunt resistor to limit maximum base current.
- The 50 amp transistors are rated to handle junction temperatures as high 200 degrees Celsius
- Total power dissipation or power handling capacity without heatsink is 300 watts
MJ11032 Equivalent/Alternate:
- MJ10000, MJ10001, MJ10002, MJ10003, MJ10004, MJ11033
Application
- General Purpose Amplifier
- Darlington
Package Include:
- 1 x MJ11032 NPN Power Darlington Transistor
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