2SK3116 2SK-3116 K3116 3116 MOSFET 600V 7.5A 1.5W TO-220 Field Effect Transistor Silicon N-Channel Power MOSFET Transistor

Description: 2SK3116 N-Channel High Voltage MOSFET

2SK3116 2SK-3116 K3116 3116 MOSFET 600V 7.5A 1.5W TO-220 Field Effect Transistor Silicon N-Channel Power MOSFET Transistor

Specifications:

• Channel Type N
• Maximum Continuous Drain Current 7.5 A
• Maximum Drain Source Voltage 600 V
• Maximum Drain Source Resistance 1.2 Ω
• Maximum Gate Source Voltage ±30 V
• Mounting Type Through Hole
• Pin Count 3
• Channel Mode Enhancement
• Category Power MOSFET
• Maximum Power Dissipation 1.5 W
• Configuration Single
• Maximum Operating Temperature +150 °C
• Typical Turn-Off Delay Time 50 ns
• Typical Input Capacitance @ Vds 1100 pF V @ 10
• Minimum Operating Temperature -55 °C
• Typical Gate Charge @ Vgs 26 nC V @ 10
• Number of Elements per Chip 1
• Typical Turn-On Delay Time 18 ns

Package Include:

• 1 x 2SK3116 N-Channel High Voltage MOSFET