Description: IRF1010N N-Channel Mosfet
IRF1010E IRF1010 F1010E IRF1010N F1010N 1010 MOSFET 85A 55V TO-220 N-Channel In-Line Power MOSFET Field Effect Transistor
Features:
- Manufacturer: International Rectifier
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage: 55 V
- Gate-Source Breakdown Voltage: +/- 20 V
- Continuous Drain Current: 85 A
- Resistance Drain-Source RDS (on): 11 mOhms
- Configuration: Single
- Package / Case: TO-220AB
- Minimum Operating Temperature: – 55 C
- Power Dissipation: 180 W
- Typical Turn-Off Delay Time: 39 ns
Package Include:
- 1 x IRF1010N N-Channel Mosfet
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