Description: 2SC3199 Transistor 50V 150mA 200mW
2SC3199 2SC-3199 2SC 3199 C3199 NPN Transistor 50V 0.15A 0.2W TO-92 General Purpose Triode Bipolar Transistor Silicon Epitaxial Planar Transistor
Specification:
- Type Designator: 2SC3199
- Material of transistor: Si
- Polarity: NPN
- Maximum collector power dissipation (Pc), W: 0.2
- Maximum collector-base voltage |Ucb|, V: 50
- Maximum collector-emitter voltage |Uce|, V: 0
- Maximum emitter-base voltage |Ueb|, V: 0
- Maximum collector current |Ic max|, A: 0.15
- Transition frequency (ft), MHz: 130
- Collector capacitance (Cc), pF:
- Forward current transfer ratio (hFE), min: 35
- Noise Figure, dB: –
- Package of 2SC3199 transistor: U29-1
Characteristics of 2SC3199 Transistor
- Type –Â NPN
- Collector-Emitter Voltage:Â 50Â V
- Collector-Base Voltage:Â 50Â V
- Emitter-Base Voltage:Â 5Â V
- Collector Current:Â 0.15Â A
- Collector Dissipation –Â 0.2Â W
- DC Current Gain (hfe) – 70 to 700
- Transition Frequency –Â 80Â MHz
- Noise Figure –Â 1Â dB
- Operating and Storage Junction Temperature Range -55 to +125 °C
- Package –Â TO-92S
Package Include:
- 1 x 2SC3199 2SC-3199 2SC 3199 C3199 NPN Transistor 50V 0.15A 0.2W TO-92 General Purpose Triode Bipolar Transistor Silicon Epitaxial Planar Transistor
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